EL-PT28-21B/TR8 Everlight Electronics CO., LTD, EL-PT28-21B/TR8 Datasheet - Page 4

Photodetector Transistors Phototransistor

EL-PT28-21B/TR8

Manufacturer Part Number
EL-PT28-21B/TR8
Description
Photodetector Transistors Phototransistor
Manufacturer
Everlight Electronics CO., LTD
Type
Phototransistorr
Datasheet

Specifications of EL-PT28-21B/TR8

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Breakdown Voltage
30 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Wavelength
940 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Fig.3 Relative Collector Current vs.
Everlight Electronics Co., Ltd.
Device No:DTT-028-019
100
80
60
40
20
Ambient Temperature
160
140
120
100
0
60
80
40
20
0
Ambient Temperature
-25
0
10
0
20 30
25
2
50
40
50
75
http:\\www.everlight.com
Prepared date:07-20-2005
60
85
100
70
0.01
0.1
100
0.8
0.6
0.4
0.2
1.0
Fig.4 Collector Current vs.
10
0
Fig.2 Spectral Sensitivity
1
0.5
700
Irradiance
800
C
Rev 2
Prepared by:Jaine Tsai
1
900
PT28-21B/TR8
1000
3
Page: 4 of 10
Ta=25
2
1100
C
1300
5

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