OP793B Optek, OP793B Datasheet

OP793B

Manufacturer Part Number

OP793B

Description

Photodetector Transistors Photo Transistor

Manufacturer

Optek

Datasheet

1.OP798B.pdf (3 pages)

Specifications of OP793B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 3
Download datasheet (259Kb)

Fea tures

De scrip tion

The OP793/OP798 series consists of

NPN silicon phototransistors molded in

dark blue epoxy packages. These

devices are 100% production tested

using infrared light for close correlation

with Optek’s GaAs and GaAlAs emitters.

The phototransistor has an internal base-

emitter resistor which provides protection

from low level ambient lighting

conditions. This feature is also useful

when the media being detected is semi-

transparent to infrared light in interruptive

applications.

Prod uct Bul le tin OP793, OP798

Sep tem ber 1999

NPN Pho to tran sis tor with Base- Emitter Resistor

Types OP793, OP798 Series

Op tek Tech nol ogy, Inc.

Variety of sensitivity ranges

TO-18 equivalent package style

Base-emitter resistor provides ambient

light protection

1215 W. Crosby Road

Ab so lute Maxi mum Rat ings (T

Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V

Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA

Con tinu ous Col lec tor Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40

Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing

iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260

Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.

(2) Derate linearly 3.33 mW/

(3) V

(4) The knee point irradiance is defined as the irradiance required to increase I

Typi cal Per form ance Curves

Max. 20 grams force may be applied to leads when soldering.

wavelength of 890 nm and E

OP793

OP798

= 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission

Typi cal Spec tral Re sponse

Wave length - nm

Car roll ton, Texas 75006

C above 25

e(APT)

of 1.7 mW/cm

= 25

(972) 323- 2200

C un less oth er wise noted)

Sche matic

average within a .250" dia. aperture.

NOTE: Dimensions not shown on OP798

are common with OP793.

Dimensions are in inches (millimeters).

Fax (972) 323- 2396

C(ON)

C to +100

to 50 µA.

(1)

(2)

Related parts for OP793B

OP793B Summary of contents

Page 1

... NPN silicon phototransistors molded in dark blue epoxy packages. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. The phototransistor has an internal base- emitter resistor which provides protection from low level ambient lighting conditions ...

Page 2

... Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road less oth er wise noted) MIN TYP MAX UNITS 2.45 7.50 OP793A OP793B 1.65 4.55 OP793C 0.90 3.05 OP793D 0.90 7.50 OP798A 4 ...

Page 3

Types OP793, OP798 Series On- State Col lec tor Cur rent vs. Irradiance 100 10 1 OP593 . .01 LED: λ = 890 nm .001 .0001 OP793 .00001 .001 . Irradiance - ...

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