BPX 43-4 OSRAM Opto Semiconductors Inc, BPX 43-4 Datasheet - Page 4

• Manufacturer Part Number: BPX 43-4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 100 nA
• Fall Time: 15 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.24V
• Dark Current (max): 100nA
• Light Current: 9.5mA
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0016S004

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
E
V
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
Stromverstärkung
Current gain
E
1)
1)
2007-04-02
C
C
e
v
CE
e
e
= 1 mA,
=
I
I
= 1000 Ix, Normlicht/standard light A,
= 0.5 mW/cm
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
= 5 V
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
1)
V
CC
× 0.3
= 5 V,
2
2
2
,
,
V
V
CE
CE
R
= 5 V
= 5 V
L
= 1 kΩ
Symbol
Symbol
I
I
t
V
I
----------- -
I
r
PCE
PCE
,
PCE
PCB
CEsat
t
f
4
-2
0.8 …1.6
3.8
9
200
110
-3
1.25 …2.5
6.0
12
220
170
Value
Wert
-4
2.0…4.0
9.5
15
240
270
-5
≥ 3.2
15.0
18
260
430
BPX 43
Einheit
Unit
mA
mA
μs
mV
–