QSB363GR Fairchild Semiconductor, QSB363GR Datasheet - Page 2

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QSB363GR

Manufacturer Part Number
QSB363GR
Description
Photodetector Transistors Phototransistor Si Infrared
Manufacturer
Fairchild Semiconductor
Type
Photo Transistorr
Datasheet

Specifications of QSB363GR

Maximum Power Dissipation
75 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Rise Time
15 us
Package / Case
T-3/4
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
1.5mA
Power Dissipation
75mW
Peak Wavelength
940nm
Half-intensity Angle
24deg
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
2
Package Type
T-3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QSB363GR
Manufacturer:
FSC
Quantity:
4 000
Part Number:
QSB363GR
Manufacturer:
TOSHIBA
Quantity:
45 700
QSB363 Rev. 1.0.2
Absolute Maximum Ratings
Notes
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 µs, T = 10 ms.
5. D = 940 nm, GaAs.
Electrical/Optical Characteristics
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
Peak Sensitivity Wavelength
Reception Angle
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
On-State Collector Current
Collector-Emitter Saturation Voltage
Rise Time
Fall Time
Parameters
(1)
Parameter
(2,3,4)
(2,3)
I
I
V
C
E
(T
CE
= 100 µA, Ee = 0mW/cm
= 100 µA, Ee = 0mW/cm
Test Conditions
A
= 20V, Ee = 0mW/cm
Ee = 1 mW/cm
Ee = 1 mW/cm
= 25°C unless otherwise specified)
R
V
I
I
V
L
C
C
(T
CE
CE
= 1000 Ω
= 2 mA
= 1 mA
A
= 5 V,
= 5V
=25°C)
2
2
Symbol
2
T
V
V
T
T
T
OPR
P
STG
SOL
SOL
CEO
ECO
2
C
2
2
Symbol
V
BV
BV
CE (SAT)
I
I
C(on)
CEO
λ
Θ
t
CEO
ECO
t
P
r
f
-25 to +85
-40 to +85
Rating
Min.
1.0
30
260
260
5
30
75
5
Typ.
940
±12
1.5
15
15
Max
100
0.4
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Unit
mW
°C
°C
°C
°C
V
V
Units
nm
mA
nA
µs
µs
V
V
V

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