BPW 21 OSRAM Opto Semiconductors Inc, BPW 21 Datasheet - Page 3

• Manufacturer Part Number: BPW 21
• Description: Photodiodes PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 21

• Photodiode Material: Silicon
• Peak Wavelength: 550 nm
• Maximum Reverse Voltage: 10 V
• Maximum Power Dissipation: 250 mW
• Maximum Dark Current: 200 nA
• Maximum Rise Time: 1.5 us
• Maximum Fall Time: 1.5 us
• Package / Case: TO-5
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Polarity: Forward
• Reverse Breakdown Voltage: 10V
• Forward Voltage: 1.2V
• Responsivity: 0.34A/W
• Dark Current (max): 200nA
• Power Dissipation: 250mW
• Rise Time: 1500ns
• Fall Time: 1500ns
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0885

Kennwerte (
Characteristics (
Bezeichnung
Parameter
Kurzschlußstrom,
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
Durchlaßspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-04-03
L
R
= 1 kΩ;
= 5V, λ = 550 nm
V
V
R
R
T
= 0 V,
= 5 V; λ = 550 nm;
A
= 25 °C, Normlicht A,
T
V
E
A
R
v
I
f
= 25 °C, standard light A,
= 1000 Ix
F
= 5V, λ = 550 nm
= 1 MHz,
= 100 mA,
V
I
V
I
SC
SC
O
O
E
I
E
= 0
p
= 10 μA
= 0
T
= 2856 K)
T
= 2856 K) (cont’d)
3
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
r,
SC
F
0
t
f
V
I
Wert
Value
10
1.5
1.2
580
– 2.6
– 0.05
7.2 × 10
1 × 10
12
– 14
Einheit
Unit
μA
μs
V
pF
mV/K
%/K
----------- -
cm
------------------------- -
W
Hz
×
W
BPW 21
Hz