BPW 34 SR-Z OSRAM Opto Semiconductors Inc, BPW 34 SR-Z Datasheet - Page 2

• Manufacturer Part Number: BPW 34 SR-Z
• Description: Photodiodes SMT REVERSE DIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 SR-Z

• Photodiode Type: PIN
• Polarity: Reverse
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.62A/W
• Peak Wavelength: 850nm
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 80uA
• Rise Time: 20ns
• Fall Time: 20ns
• Photodiode Material: Si
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2701

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
Total power dissipation
Kennwerte (
Characteristics (
Bezeichnung
Parameter
Fotoempfindlichkeit,
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
Dark current
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung,
Open-circuit voltage
2007-05-23
= 10% von
= 10% of
S
max
T
S
V
A
max
R
= 25 ° C, Normlicht A,
T
= 10 V
A
T
= 25 ° C
A
E
= 25 ° C, standard light A,
V
v
R
= 1000 Ix
= 5 V
T
= 2856 K)
T
= 2856 K)
Symbol
Symbol
T
V
P
Symbol
Symbol
S
λ
λ
A
L
L
ϕ
I
S
η
V
2
op
R
R
tot
S max
λ
O
×
×
;
T
B
W
stg
BPW 34, BPW 34 S, BPW 34 SR
Wert
Value
80 (≥50)
850
400 … 1100
7.00
2.65 × 2.65
± 60
2 (≤ 30)
0.62
0.90
365 (≥ 300)
Wert
Value
– 40 … + 100
32
150
Einheit
Unit
° C
V
mW
Einheit
Unit
nA/Ix
nm
nm
mm
mm × mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
2