BPW 34 SR-Z OSRAM Opto Semiconductors Inc, BPW 34 SR-Z Datasheet - Page 2
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BPW 34 SR-Z
Manufacturer Part Number
BPW 34 SR-Z
Description
Photodiodes SMT REVERSE DIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BPW_34_SR-Z.pdf
(8 pages)
Specifications of BPW 34 SR-Z
Photodiode Type
PIN
Polarity
Reverse
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.62A/W
Peak Wavelength
850nm
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
80uA
Rise Time
20ns
Fall Time
20ns
Photodiode Material
Si
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2701
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Verlustleistung,
Total power dissipation
Kennwerte (
Characteristics (
Bezeichnung
Parameter
Fotoempfindlichkeit,
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom,
Dark current
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung,
Open-circuit voltage
2007-05-23
= 10% von
= 10% of
S
max
T
S
V
A
max
R
= 25 ° C, Normlicht A,
T
= 10 V
A
T
= 25 ° C
A
E
= 25 ° C, standard light A,
V
v
R
= 1000 Ix
= 5 V
T
= 2856 K)
T
= 2856 K)
Symbol
Symbol
T
V
P
Symbol
Symbol
S
λ
λ
A
L
L
ϕ
I
S
η
V
2
op
R
R
tot
S max
λ
O
×
×
;
T
B
W
stg
BPW 34, BPW 34 S, BPW 34 SR
Wert
Value
80 (≥50)
850
400 … 1100
7.00
2.65 × 2.65
± 60
2 (≤ 30)
0.62
0.90
365 (≥ 300)
Wert
Value
– 40 … + 100
32
150
Einheit
Unit
° C
V
mW
Einheit
Unit
nA/Ix
nm
nm
mm
mm × mm
Grad
deg.
nA
A/W
Electrons
Photon
mV
2