PT550 Sharp Microelectronics, PT550 Datasheet - Page 2

• Manufacturer Part Number: PT550
• Description: Photodetector Transistors Darlington Output Ver PT501 3-142mA
• Manufacturer: Sharp Microelectronics
• Type: Phototransistorr

Specifications of PT550

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 1 uA
• Collector- Emitter Voltage Vceo Max: 35 V
• Fall Time: 300 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 25 C
• Rise Time: 350 us
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 100mA
• Current - Dark (id) (max): 1µA
• Wavelength: 800nm
• Viewing Angle: 12°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1 Collector Power Dissipation vs.
Fig. 3 Relative Collector Current vs.
Fig.4-b Collector Current vs.
10
175
150
125
100
350
300
250
200
150
100
10
10
75
50
25
50
Ambient Temperature
-1
Ambient Temperature
0
0
5
2
5
2
5
2
1
0
- 25
- 25
5
Irradiance
V
T
CE
a
10
Irradiance E
= 25˚C
0
0
= 5V
- 1
Ambient temperature T
Ambient temperature T
2
25
25
e
5
( mW/cm
50
50
( PT550F )
10
- 0
75
75
2
)
a
2
a
( ˚C )
( ˚C )
100
100
125
125
Fig. 2 Collector Dark Current vs.
Fig.4-a Collector Current vs.
Fig.5-a Collector Current vs.
10
10
10
10
10
10
10
10
10
0.05
10
10
- 10
- 11
0.5
0.2
0.1
20
10
- 4
- 5
- 6
- 7
- 8
- 9
- 1
Ambient Temperature
5 V
5
5
5
5
5
5
5
5
2
5
2
5
2
5
2
1
1
0
- 25 0
Ambient temperature T
5
0
Irradiance
Collector-emitter Voltage
V
T
CE
CE
a
10
= 25˚C
= 10V
Collector-emitter voltage V
= 5V
Irradiance E
-2
25
2
5
50
e
5
( mW/cm
75 100
E
a
( PT550 )
e
10
( ˚C )
= 0.1mW/cm
0.05mW/cm
- 1
0.02mW/cm
0.01mW/cm
10
2
)
2
( PT550 )
T
a
CE
= 25˚C
( V )
2
2
PT550/PT550F
2
2
15