BPX 85 OSRAM Opto Semiconductors Inc, BPX 85 Datasheet - Page 5

• Manufacturer Part Number: BPX 85
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Arrayr

Specifications of BPX 85

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Multiple Digit Array
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 3
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 320uA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 6
• Package Type: Multiple-digit Array
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0031

Relative Spectral Sensitivity
S
Photocurrent
I
Directional Characteristics
S
2011-05-27
PCE
rel
rel
S
=
rel
=
/
I
100
80
70
60
50
40
30
20
10
PCE25
f
f
%
0
400
(λ)
(ϕ)
500 600 700 800 900
o
=
f
(
T
A
),
V
CE
= 5 V
OHF04048
λ
nm
1100
Photocurrent
I
Collector-Emitter Capacitance
C
PCE
CE
C
CE
=
=
pF
f
f
8
7
6
5
4
3
2
1
0
10
(
(
V
E
-3
CE
e
),
),
10
V
-2
f
CE
= 1 MHz,
10
= 5 V
5
-1
10
0
E
10
OHF04051
= 0
V
1
CE
V
10
2
Total Power Dissipation
P
Dark Current
I
Dark Current
I
CEO
CEO
tot
I
I
CEO
=
CEO
BPX 80, BPX 82 … 89
=
=
10
10
10
10
10
10
10
10
10
nA
10
10
f
nA
f
f
4
3
2
1
0
-1
-2
-1
-2
-25
(
1
0
(
(
T
0
V
T
A
A
CE
)
),
5
),
0
V
E
10
CE
= 0
= 20 V,
25
15
20
50
25
E
75
= 0
OHF04049
OHF04050
30
V
T
˚C
CE
A
V
100
35