BPX 38-4 OSRAM Opto Semiconductors Inc, BPX 38-4 Datasheet - Page 2

• Manufacturer Part Number: BPX 38-4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 38-4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 100 nA
• Fall Time: 15 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 us
• Package / Case: TO-18
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.2V
• Dark Current (max): 100nA
• Light Current: 2.3mA
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 80deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0015S004

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
Emitter-Basisspannung
Emitter-base voltage
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2007-03-29
T
A
= 25 °C
Symbol
Symbol
T
V
I
I
V
P
R
C
CS
2
op
CE
EB
tot
thJA
;
T
stg
Wert
Value
– 40 … + 125
50
50
200
7
220
450
Einheit
Unit
°C
V
mA
mA
V
mW
K/W
BPX 38