BPX 81 OSRAM Opto Semiconductors Inc, BPX 81 Datasheet

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BPX 81

Manufacturer Part Number
BPX 81
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BPX 81

Maximum Power Dissipation
90 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Transparent
Collector-emitter Voltage
35V
Collector Current (dc) (max)
50mA
Dark Current (max)
50nA
Light Current
250nA
Power Dissipation
90mW
Peak Wavelength
850nm
Half-intensity Angle
36deg
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0020
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
BPX 81
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Hohe Linearität
• Einstellige Zeilenbauform aus klarem Epoxy
• Gruppiert lieferbar
Anwendungen
• Computer-Blitzlichtgeräte
• Miniaturlichtschranken für Gleich- und
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPX 81
BPX 81-2/3
BPX 81-3
BPX 81-3/4
BPX 81-4
2007-03-30
von 450 nm bis 1100 nm
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702P0020
Q62702P3583
Q62702P0043S0003 0.40…0.80
Q62702P3584
Q62702P0043S0004 > 0.63
Fotostrom ,
Photocurrent
I
> 0.25
0.25…0.80
> 0.40
PCE
(mA)
1
Features
• Especially suitable for applications from
• High linearity
• One-digit array package of transparent epoxy
• Available in groups
Applications
• Computer-controlled flashes
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
450 nm to 1100 nm
E
e
= 0.5 mW/cm
2
, λ = 950 nm
, V
CE
= 5 V

Related parts for BPX 81

BPX 81 Summary of contents

Page 1

... Bestellnummer Type Ordering Code BPX 81 Q62702P0020 BPX 81-2/3 Q62702P3583 BPX 81-3 Q62702P0043S0003 0.40…0.80 BPX 81-3/4 Q62702P3584 BPX 81-4 Q62702P0043S0004 > 0.63 2007-03-30 Features • Especially suitable for applications from 450 nm to 1100 nm • High linearity • One-digit array package of transparent epoxy • ...

Page 2

... Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 μs Collector surge current = 25 °C Verlustleistung Total power dissipation Wärmewiderstand Thermal resistance 2007-03-30 Symbol Wert Symbol Value – 40 … stg 200 tot R 750 thJA 2 BPX 81 Einheit Unit ° K/W ...

Page 3

... Abmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität Capacitance MHz Dunkelstrom Dark current 2007-03-30 Symbol Wert Symbol Value λ 850 S max λ 450 … 1100 A 0.11 × 0.5 × 0 × ϕ ± 7 (≤ 50) CEO 3 BPX 81 Einheit Unit × mm Grad deg ...

Page 4

... PCEmin 0.5 mW/ ist der minimale Fotostrom der jeweiligen Gruppe. PCEmin the min. photocurrent of the specified group. PCEmin 2007-03-30 Symbol Wert Symbol Value - 0.25…0.50 0.40…0.80 PCE I 1.2 1.9 PCE 5 150 150 CEsat 4 BPX 81 Einheit Unit -4 ≥ 0.63 mA 2.9 mA μs 8 150 mV ...

Page 5

... Photocurrent PCE PCE25 A CE Directional Characteristics (ϕ) rel 2007-03-30 Photocurrent PCE e CE Collector-Emitter Capacitance MHz 1E-03 1E-02 1E-01 1E+00 1E+01 1E+ BPX 81 Total Power Dissipation tot A Dark Current CEO 0.1 0. Dark Current CEO A CE 10000 nA 1000 I CEO 100 10 1 0.1 0.01 - °C ...

Page 6

... A 0.4 A Radiant sensitive area (0.4 x 0.4) 1.4 (0.055) 1.0 (0.039) Collector (BPX 81) Cathode (LD 261) 1) Detaching area for tools, flash not true to size. Approx. weight 0. Chip position 0 ... 5˚ 2.54 (0.100) spacing ...

Page 7

... If they fail reasonable to assume that the health of the user may be endangered. 2007-03-30 (nach CECC 00802) (acc. to CECC 00802 Welle 2. wave 2 K/s 5 K/s Zwangskühlung 2 K/s forced cooling 100 2 7 Normalkurve standard curve Grenzkurven limit curves 150 200 t with the express written approval of OSRAM OS. BPX 81 OHLY0598 s 250 ...

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