QSC112CC6R0 Fairchild Semiconductor, QSC112CC6R0 Datasheet - Page 4

• Manufacturer Part Number: QSC112CC6R0
• Description: Photodetector Transistors DETECTOR IR-Si T1 16DEG 24.5MM LEADS
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSC112CC6R0

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 5 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 4mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 8deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: QSC112CC6R0_NL

©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
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