FOD3180SDV Fairchild Semiconductor, FOD3180SDV Datasheet - Page 3

• Manufacturer Part Number: FOD3180SDV
• Description: High Speed Optocouplers 2A Out Cur Hi Spd IGBT MOSFET OPTO
• Manufacturer: Fairchild Semiconductor

Specifications of FOD3180SDV

• Input Type: DC
• Isolation Voltage: 5000 Vrms
• Minimum Forward Diode Voltage: 1.2 V
• Output Device: Transistor
• Configuration: 1 Channel
• Maximum Forward Diode Voltage: 1.8 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Input Diode Current: 25 mA
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP W SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
Switching Characteristics
Over recommended operating conditions unless otherwise specified.
Isolation Characteristics
* All typical values at T
Symbol
Symbol
Symbol
| CM
V
| CM
I
V
V
I
BV
V
I
I
CCH
C
I
CCL
FLH
V
V
OH
R
C
OL
FHL
t
t
F
OH
OL
PLH
PHL
IN
F
ISO
t
t
I-O
I-O
/ T
R
r
f
H
L
A
|
|
Parameter
High Level Output Current
Low Level Output Current
High Level Output Voltage
Low Level Output Voltage
High Level Supply Current
Low Level Supply Current
Threshold Input Current Low to High
Threshold Input Voltage High to Low I
Input Forward Voltage
Temperature Coefficient of
Forward Voltage
Input Reverse Breakdown Voltage
Input Capacitance
Parameter
Withstand Isolation Voltage
Resistance (input to output)
Capacitance (input to output)
Parameter
Propagation Delay Time to High
Output Level
Propagation Delay Time to Low
Output Level
Rise Time
Fall Time
Output High Level Common
Mode Transient Immunity
Output Low Level Common
Mode Transient Immunity
A
= 25°C
(7)
(7)
(T
(T
A
(5)(6)
(2)(3)
(5)(6)
(2)(3)
= -20°C to +70°C)
A
(8)(9)
(8)(10)
= -20°C to +70°C)
(11)(12)
(12)
I
Duty Cycle = 50%, C
C
T
V
T
V
F
A
A
CM
CC
L
= 10mA, R
V
V
I
I
Output Open
I
Output Open
V
I
I
I
I
f = 1MHz, V
T
= +25°C, I
= +25°C, V
O
O
F
O
O
F
F
R
= 10nF, R
t = 1min., I
A
OH
OL
F
= 20V
= 7 to 10mA
= 10mA
= 10mA
= 1.5kV, V
Test Conditions
Test Conditions
= -100mA
= 100mA
= 0mA, V
= 0mA, V
= 10µA
= 25°C, R.H. < 50%,
= 0 to 0.8V
(T
= (V
= (V
Test Conditions
Freq. = 1MHz
V
A
3
I-O
= -20°C to +70°C)
CC
CC
g
g
f
= 500V
f
= 7 to 10mA,
I-O
O
O
F
– V
= 10
= 10 , f = 250kHz,
– V
CC
= 0V, V
= 0V
> 5V
< 0.5V
EE
EE
= 20V
20 µA
– 1V)
g
– 1V)
CM
= 10nF
= 1.5kV,
V
CC
Min.
5000
Min.
0.5
0.5
0.8
1.2
5
– 0.5
Min.
50
50
10
10
Typ.*
Typ.*
10
-1.5
4.8
5.0
1.5
60
1
11
Typ.*
135
105
75
55
V
EE
Max.
Max.
6.0
6.0
1.8
10
+ 0.5
Max.
500
500
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mV/°C
Unit
V
Unit
kV/µs
kV/µs
pF
Unit
mA
mA
mA
rms
pF
A
A
V
V
V
V
V
ns
ns
ns
ns