MCT5211M Fairchild Semiconductor, MCT5211M Datasheet

High Speed Optocouplers Phototransistor

MCT5211M

Manufacturer Part Number
MCT5211M
Description
High Speed Optocouplers Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MCT5211M

Input Type
DC
Isolation Voltage
5300 Vrms
Maximum Fall Time
30 us
Maximum Rise Time
20 us
Output Device
Transistor With Base
Configuration
1
Maximum Baud Rate
150 KBps
Maximum Forward Diode Voltage
1.5 V
Maximum Reverse Diode Voltage
6 V (Min)
Maximum Input Diode Current
50 mA
Maximum Power Dissipation
260 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP White
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©1983 Fairchild Semiconductor Corporation
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3
MCT5201M, MCT5210M, MCT5211M
Low Input Current Phototransistor Optocouplers
Features
Applications
Schematic
CATHODE
High CTR
CTR guaranteed 0°C to 70°C
High common mode transient rejection 5kV/µs
Data rates up to 150kbits/s (NRZ)
Underwriters Laboratory (UL) recognized,
file #E90700, volume 2
IEC60747-5-2 approved (ordering option V)
CMOS to CMOS/LSTTL logic isolation
LSTTL to CMOS/LSTTL logic isolation
RS-232 line receiver
Telephone ring detector
AC line voltage sensing
Switching power supply
ANODE
CE(SAT)
2
3
1
comparable to Darlingtons
6
5 COL
4 EMITTER
BASE
Description
The MCT52XXM series consists of a high-efficiency
AlGaAs, infrared emitting diode, coupled with an NPN
phototransistor in a six pin dual-in-line package.
The MCT52XXM is well suited for CMOS to LSTT/TTL
interfaces, offering 250% CTR
input current. When an LED input current of 1.6mA is
supplied data rates to 20K bits/s are possible.
The MCT52XXM can easily interface LSTTL to LSTTL/
TTL, and with use of an external base to emitter resistor
data rates of 100K bits/s can be achieved.
Package Outlines
CE(SAT)
with 1mA of LED
September 2009
www.fairchildsemi.com

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MCT5211M Summary of contents

Page 1

... ANODE CATHODE 2 3 ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 Description The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTR input current ...

Page 2

... LED Power Dissipation D Derate Linearly From 25°C DETECTOR I Continuous Collector Current C P Detector Power Dissipation D Derate Linearly from 25°C ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 Parameters 2 Value Units -55 to +150 °C -40 to +100 °C 260 for 10 sec °C 260 mW 3 ...

Page 3

... C Isolation Capacitance ISO CM Common Mode Transient H Rejection – Output HIGH CM Common Mode Transient L Rejection – Output LOW *All typical T = 25°C A ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1 25°C unless otherwise specified) A Test Conditions I = 5mA 2mA 10µ 0V 1.0MHz ...

Page 4

... Propagation Delay PLH (4) LOW-to-HIGH (5) t Delay Time d (6) t Rise Time r (7) t Storage Time s (8) t Fall Time f *All typicals 25°C A ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 (Continued 25°C unless otherwise specified) A Test Conditions I = 5mA 0. 3.0mA 0. 1.6mA 0. 1.0mA 0.4V F ...

Page 5

... ISO 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1 defined as the transistor collector current ( defined as the transistor collector base photocurrent time 100% ...

Page 6

... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 6 Min. Typ. Max. ...

Page 7

... T – AMBIENT TEMPERATURE ( C) A Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current 100 10 1 0.1 0.01 0 – FORWARD CURRENT (mA) F ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 100 5mA F 0.1 ...

Page 8

... I = 5mA F Refer to Figure 13 for switching time circuit 100k PLH PHL 0 -40 - – AMBIENT TEMPERATURE ( C) A ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 (Continued 100 100 120 100 100 120 8 Fig. 8 Switching Time vs. Ambient Temperature I = 10mA Refer to Figure 13 for switching time circuit ...

Page 9

... Typical Electro-Optical Characteristics Pulse Gen 10KHz 10% D.F. I monitor F 100 TEST CIRCUIT INPUT 0 OUTPUT (V 0 ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1 25°C unless otherwise specified 5 Pulse Gen 10KHz 10% D. monitor F 330K Figure 13. 50 90% t PHL ) O 1 Figure 14. Switching Circuit Waveforms ...

Page 10

... Note: All dimensions in mm. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02–1.78 8.13– ...

Page 11

... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 Standard Through Hole Device (50 units per tube) Surface Mount Lead Bend Surface Mount ...

Page 12

... C 140 120 100 ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 12 Ø1.5 MIN 1 ...

Page 13

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©1983 Fairchild Semiconductor Corporation MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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