SI1405DL-T1-GE3 Vishay, SI1405DL-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1405DL-T1-GE3
• Description: MOSFET P-CH 8V SC-70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1405DL-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Power - Max: 568mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71073
S10-0935-Rev. C, 19-Apr-10
0.1
0.5
0.4
0.3
0.2
0.1
0
5
1
5
4
3
2
1
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 1.8 A
0.2
On-Resistance vs. Drain Current
= 4 V
1
1
V
SD
Q
- Source-to-Drain Voltage (V)
V
g
0.4
GS
I
- Total Gate Charge (nC)
D
2
- Drain Current (A)
Gate Charge
= 1.8 V
T
2
J
= 150 °C
0.6
3
3
0.8
4
V
V
T
GS
GS
J
= 25 °C
= 2.5 V
= 4.5 V
4
1.0
5
1.2
5
6
1000
800
600
400
200
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 0.8 A
V
I
D
- 25
C
GS
C
= 1.8 A
rss
iss
= 4.5 V
1
V
V
DS
T
GS
2
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
oss
25
Capacitance
I
D
2
= 1.8 A
50
4
Vishay Siliconix
3
75
Si1405DL
www.vishay.com
100
6
4
125
150
8
5
3