SI5441DC-T1-E3 Vishay, SI5441DC-T1-E3 Datasheet

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SI5441DC-T1-E3

Manufacturer Part Number
SI5441DC-T1-E3
Description
MOSFET P-CH D-S 20V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5441DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 3.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Power - Max
1.3W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5441DC-T1-E3
Manufacturer:
VISHAY
Quantity:
256
Part Number:
SI5441DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI5441DC-T1-E3
Quantity:
3 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71055
S10-0210-Rev. E, 25-Jan-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
V
DS
- 20
Ordering Information: Si5441DC-T1-E3 (Lead (Pb)-free)
(V)
D
1206-8 ChipFE T
0.055 at V
0.083 at V
0.06 at V
D
Bottom View
D
R
D
DS(on)
S
D
GS
GS
GS
Si5441DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
= - 3.6 V
(Ω)
= - 4.5 V
= - 2.5 V
a
®
J
a
1
= 150 °C)
G
a
P-Channel 2.5 V (G-S) MOSFET
a
I
- 5.3
- 5.1
- 4.3
D
(A)
Marking Code
BA XX
b, c
Part # Code
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
Lot Traceability
and Date Code
T
T
T
T
(Typ.)
11
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 5.3
- 3.8
- 2.1
G
5 s
2.5
1.3
40
80
15
P-Channel MOSFET
- 55 to 150
± 12
- 20
- 20
260
S
D
Steady State
Maximum
- 3.9
- 2.8
- 1.1
1.3
0.7
50
95
20
Vishay Siliconix
Si5441DC
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI5441DC-T1-E3 Summary of contents

Page 1

... 2 1206-8 ChipFE T ® Bottom View Ordering Information: Si5441DC-T1-E3 (Lead (Pb)-free) Si5441DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5441DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71055 S10-0210-Rev. E, 25-Jan 150 ° °C J 0.8 1.0 1.2 Si5441DC Vishay Siliconix 1800 C 1500 iss 1200 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1 ...

Page 4

... Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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