SI6413DQ-T1-E3 Vishay, SI6413DQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI6413DQ-T1-E3
• Description: MOSFET DUAL P-CH 30V 1.8A 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6413DQ-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 800mV @ 400µA
• Gate Charge (qg) @ Vgs: 105nC @ 5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si6413DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 µA
T
Threshold Voltage
J
- Temperature (°C)
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10
0.1
-2
by R
* V
Limited
Safe Operating Area, Junction-to-Case
125
GS
DS(on)
> minimum V
V
*
150
DS
Square Wave Pulse Duration (s)
Single Pulse
- Drain-to-Source Voltage (V)
T
C
1
10
= 25 °C
-1
GS
at which R
DS(on)
10
60
50
40
30
20
10
1
0
10
is specified
-2
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
100
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
= P
S-80682-Rev. B, 31-Mar-08
1
t
Document Number: 72084
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
10
600
100