4N27SM Fairchild Semiconductor, 4N27SM Datasheet - Page 3

• Manufacturer Part Number: 4N27SM
• Description: Transistor Output Optocouplers DIP-6 PHOTO TRANS
• Manufacturer: Fairchild Semiconductor

Specifications of 4N27SM

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
Electrical Characteristics
Transfer Characteristics
* Typical values at T
DC CHARACTERISTICS
AC CHARACTERISTICS
Symbol
V
CE (SAT)
T
CTR
T
OFF
ON
Current Transfer Ratio,
Collector to Emitter
Collector-Emitter
Saturation Voltage
Non-Saturated
Turn-on Time
Turn-off Time
Parameter
A
= 25°C
(Continued) (T
I
I
T
I
T
I
I
I
R
I
R
I
R
I
R
F
F
F
C
C
F
C
F
C
A
A
L
L
L
L
= 10mA, V
= 10mA, V
= 10mA, V
= 10mA, V
= 10mA, V
= 2mA, I
= 0.5mA, I
= 2mA, V
= 2mA, V
Test Conditions
= -55°C
= +100°C
= 100
= 100 (Fig. 11)
= 100 (Fig. 11)
= 100 (Fig. 11)
F
A
CC
CC
(Fig. 11)
CE
CE
CE
= 50mA
CC
CC
F
= 25°C unless otherwise specified)
= 10mA
= 10V,
= 10V,
= 10V
= 10V,
= 10V,
= 10V,
= 10V,
3
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A1M, H11A2M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A2M, H11A3M
H11A3M, H11A4,
4N35M, 4N36M,
4N35M, 4N36M,
4N35M, 4N36M,
4N25M, 4N26M,
4N27M, 4N28M,
4N35M, 4N36M,
4N25M, 4N26M,
4N27M, 4N28M,
4N35M, 4N36M,
4N25M, 4N26M,
4N27M, 4N28M,
4N35M, 4N36M,
4N25M, 4N26M
4N27M, 4N28M
H11A1M
H11A5M
H11A4M
H11A5M
H11A5M
H11A5M
Device
4N37M
4N37M
4N37M
4N37M
4N37M
4N37M
Min. Typ.* Max. Unit
100
50
30
20
10
40
40
2
2
2
2
www.fairchildsemi.com
0.5
0.3
0.4
10
10
µs
µs
µs
%
V