FOD817W Fairchild Semiconductor, FOD817W Datasheet - Page 4
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FOD817W
Manufacturer Part Number
FOD817W
Description
Transistor Output Optocouplers TRANS OUTPUT 0.4 INCH LE
Manufacturer
Fairchild Semiconductor
Datasheet
1.FOD817D300.pdf
(12 pages)
Specifications of FOD817W
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.2 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol
R
C
V
ISO
ISO
ISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
(3)
A
= 25°C
C
/I
(T
F
A
x 100%.
FOD814,
FOD817
FOD814,
FOD817
FOD814,
FOD817
= 25°C Unless otherwise specified.) (Continued)
Device
f = 60Hz, t = 1 min,
I
V
V
I-O
Test Conditions
I-O
I-O
= 500VDC
= 0, f = 1 MHz
2µA
4
5x10
5000
Min.
10
1x10
Typ.*
0.6
11
Max.
1.0
www.fairchildsemi.com
Vac(rms)
Units
pf