H11AV1A Fairchild Semiconductor, H11AV1A Datasheet - Page 3

• Manufacturer Part Number: H11AV1A
• Description: Transistor Output Optocouplers 0.4" Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of H11AV1A

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 300 %
• Maximum Forward Diode Voltage: 1.5 V
• Minimum Forward Diode Voltage: 0.8 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: H11AV1A_NL

©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
Electrical Characteristics
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*Typical values at T
EMITTER
DETECTOR
DC CHARACTERISTIC
AC CHARACTERISTIC
Symbol
V
Symbol
Symbol
CE (SAT)
BV
BV
BV
CTR
T
T
I
I
V
C
R
C
CEO
CBO
ON
ON
V
I
ISO
ISO
ISO
R
CEO
CBO
ECO
CE
F
Current Transfer Ratio,
Collector to Emitter
Collector-Emitter
Saturation Voltage
Non-Saturated Turn-on
Time
Non Saturated Turn-off
Time
Input Forward Voltage (I
Reverse Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
Input-Output Isolation Voltage
Isolation Capacitance
Isolation Resistance
Parameter
A
= 25°C
Parameters
Parameter
(T
F
A
I
I
I
R
I
R
F
C
C
C
= 10mA)
L
L
= 25°C unless otherwise specified.)
= 10mA, V
= 2mA, I
= 2mA, V
= 2mA, V
= 100 (Fig. 11)
= 100 (Fig. 11)
Test Conditions
f = 60Hz, t = 1 sec.
V
V
I-O
I-O
F
CC
CC
= 20mA
CE
Test Conditions
= 0V, f = 1MHz
= 500 VDC
= 10V,
= 10V,
= 10V
T
T
T
V
I
I
I
V
V
V
C
C
E
A
A
A
3
R
CE
CB
CE
Test Conditions
= 100µA, I
= 1.0mA, I
= 100µA, I
= 25°C
= -55°C
= 100°C
= 6.0V
= 10V, I
= 10V
= 0V, f = 1MHz
F
H11AV1AM
H11AV2AM
F
F
F
H11AV1M
H11AV2M
= 0
Device
= 0
= 0
= 0
All
All
All
Min.
7500
10
11
Min.
0.8
0.9
0.7
70
70
Min.
7
100
50
Typ.*
0.2
Typ.*
1.18
1.28
1.05
Typ.*
100
120
0.5
10
1
8
Max.
2
Max.
Max.
1.5
1.7
1.4
10
50
300
0.4
15
15
www.fairchildsemi.com
V
Units
AC(pk)
Unit
pF
Unit
µA
nA
nA
pF
µs
µs
%
V
V
V
V
V