H11A817B300W Fairchild Semiconductor, H11A817B300W Datasheet - Page 5

• Manufacturer Part Number: H11A817B300W
• Description: Transistor Output Optocouplers Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of H11A817B300W

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.2 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 260 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8
Typical Performance Curves
10000
1000
0.01
100
100
0.1
-10
-20
10
80
60
40
20
1
0
0
-55
Fig. 11. LED Power Dissipation vs. Ambient Temperature
-60
0.2
Fig. 7 Collector Dark Current vs Ambient Temperature
V
CE
-40
-40
= 20V
Fig. 9. Frequency Response (H11AA814)
0.5
AMBIENT TEMPERATURE T
AMBIENT TEMPERATURE T
-20
-20
15
FREQUENCY f (kHz)
R = 10kΩ
0
2
L
0
20
10
20
40
1kΩ
40
60
100
A
A
(Continued)
60
80
(°C)
(°C)
100Ω
Ta = 25°C
I
V
C
CE
80
100
= 2mA
= 2V
1000
100
120
5
500
200
100
200
150
100
0.5
0.2
50
20
10
10
20
50
5
2
1
0.05
0
0
0.5
-55
Fig. 10. Frequency Response (H11AA617 and H11AA817)
V
I
Ta = 25°C
C
CE
-40
= 2mA
1
Fig. 8 Response Time vs. Load Resistance
= 2V
Fig. 12. Collector Power Dissipation
-20
0.1
AMBIENT TEMPERATURE T
2
LOAD RESISTANCE R
vs. Ambient Temperature
0.2
FREQUENCY f (kHz)
0
5
10
20
0.5
R L =10kΩ
20
40
ts
1
60
td
L
tr
50 100
tf
(kW)
2
www.fairchildsemi.com
A
1kΩ
80
(°C)
V
I
Ta = 25°C
C
CE
5
= 2mA
100Ω
100
= 2V
500
10
120