4N30S Fairchild Semiconductor, 4N30S Datasheet - Page 4

• Manufacturer Part Number: 4N30S
• Description: Transistor Output Optocouplers PHOTO DARL
• Manufacturer: Fairchild Semiconductor

Specifications of 4N30S

• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 3 V
• Output Device: Photodarlington
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
Electrical Characteristics
Isolation Characteristics
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(I
2. Pulse test: pulse width = 300µs, duty cycle
3. I
4. The frequency at which I
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Symbol
F
V
R
C
V
V
adjusted to I
V
RIO
CTI
ISO
IORM
ISO
ISO
IOTM
PR
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V
IORM
IORM
C
= 2.0mA and I
Characteristic
x 1.875 = V
x 1.5 = V
C
C
is 3dB down from the 1kHz value.
/I
PR
F
(5)
) is the ratio of the detector collector current to the LED input current.
PR
, Type and Sample Test
C
(5)
Parameter
= 0.7mA rms.
, 100% Production Test
(T
A
= 25°C Unless otherwise specified.) (Continued)
(5)
IO
f = 60Hz, t = 1 sec.
VDC
VDC
V
V
I-O
I-O
= 500V
2.0% .
Test Conditions
= 500VDC
= Ø, f = 1MHz
4
Min.
1594
1275
6000
175
850
10
0.5
4N32M*
4N33M*
Device
7
7
9
All
All
All
55/100/21
Min.
7500
2500
1500
Typ.
10
I-IV
I-IV
2
11
Typ.
0.8
Max.
Max.
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V
AC
Units
V
V
V
V
Unit
mm
mm
mm
pF
PEAK
peak
peak
peak
peak
V