CDBHD160L-G Comchip Technology, CDBHD160L-G Datasheet

CDBHD160L-G

Manufacturer Part Number

CDBHD160L-G

Description

DIODE SCHOTTKY 1A 60V TO-269AA

Manufacturer

Comchip Technology

Datasheet

1.CDBHD1100L-G.pdf (2 pages)

Specifications of CDBHD160L-G

Voltage - Peak Reverse (max)

60V

Current - Dc Forward (if)

Diode Type

Single Phase, Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Surface Mount

Package / Case

TO-269AA

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Other names

641-1211-2

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Note

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

0.2x0.2” (5.0x5.0mm) copper pad area,

Peak Forward Surge Current

8.3mS single half sine-wave superimp osed on

rated load (JEDEC Me thod)

Maximum Forward Voltage at 1.0A (Note 1)

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating Junction Temperature Range

Storage Temperature Range

2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts

3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.

1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle

Low V

• Case: Mini-Dip bridge (TO-269AA) plastic molded case

• Epoxy: UL94-V0 rated flame retardant

• Terminals: Solderable per MIL-STD-750 Method 2026

• Polarity: As marked on body

• Mounting Position: Any

• Weight: 0.0078 ounces, 0.22 grams

MDS0702004A

• Low Vf Schottky barrier chips in bridge

• Metal-Semiconductor junction with guard ring

• High surge current capability

• Silicon epitaxial planar chips

• For use in low voltage, high efficiency inverters, free

• Lead-free part, meet RoHS requirements

CDBHD120L-G Thru 1100L-G

Reverse Voltage: 20 - 100 Volts

Forward Current: 1.0 Amp

Features

Mechanical Data

wheeling, and polarity protection applications

Schottky Bridge Rectifiers

see Figure 1

CDBHD - Symbols

= 100 °C

25°C

FSM

RRM

STG

RMS

θJA

θJL

120L

0.44

.193(4.90)

.177(4.50)

140L

.031(0.8)

.019(0.5)

250

–

-55 ~ +125

-55 ~ +150

–

0.625

.106(2.7)

.090(2.3)

30.0

160L

20.0

85.0

1.0

0.5

COMCHIP

SMD DIODE SPECIALIST

.067(1.7)

.057(1.3)

.008(0.2)

Mini-DIP

.106(2.7)

.090(2.3)

Max.

180L

125

0.75

C .02(0.5)

1100L

100

.114(2.90)

.094(2.40)

100

Page 1

Unit :inch(mm)

.051(1.3)

.035(0.9)

Amps

Units

°C/W

Volts

°C

.016(0.41)

.006(0.15)

.043(1.1)

.027(0.7)

Related parts for CDBHD160L-G

CDBHD160L-G Summary of contents

Page 1

... Low V Schottky Bridge Rectifiers F CDBHD120L-G Thru 1100L-G Reverse Voltage 100 Volts Forward Current: 1.0 Amp Features • Low Vf Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • High surge current capability • Silicon epitaxial planar chips • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • ...

Page 2

... CDBHD160L-G 0.1 CDBHD180L-G - 1100L-G 0.01 0 0.2 0.4 0.6 Instantaneous Forward Voltage (Volts) Fig Typical Junction Capacitance 1000 CDBHD120L-G - 140L-G 100 CDBHD160L-G CDBHD180L-G - 1100L-G 10 0.1 1.0 10 Reverse Voltage (Volts) MDS0702004A Fig Maximum Non-Repetitive Peak 100 10 T 8.3mS single half sine-wave (JEDEC Method) ...

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