B6S-G Comchip Technology, B6S-G Datasheet - Page 2

• Manufacturer Part Number: B6S-G
• Description: RECT BRIDGE GPP 600V 0.8A MBS
• Manufacturer: Comchip Technology

Specifications of B6S-G

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 800mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: MBS-1, 4-SOIC
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Forward Continuous Current: 0.8 A
• Max Surge Current: 40 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 641-1335-2

Surface Mount Glass Passivated Bridge Rectifiers
100
0.01
1.0
10
0.1
0.6
0.4
1.0
0.8
0.2
0.1
MDS0905001A
0
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
MOUNTED ON BOARD
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.3-TYPICAL REVERSE CHARACTERISTICS
20
40
RATINGS AND CHARACTERISTIC CURVES B05S-G thru B10S-G
AMBIENT TEMPERATURE,
40
60
T
T
J
=125°C
J
=25°C
60
80
100
10
1.0
1
80
100
TJ=25°C f=1MHZ
100
120
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE
120
140
4
140
160
10.0
VOLTS
0.01
1.0
10
40
30
20
0.1
10
0
1
0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
FIG.4-TYPICAL FORWARD CHARACTERISTICS
(JEDEC METHOD)
0.2
2
FIG.2 - MAXIMUM NON-REPETITIVE
0.4
NUMBER OF CYCLES AT 60Hz
100
0.6
SURGE CURRENT
5
0.8
10
1.0
T
PULSE WIDTH 300us
J
=25°C
20
1.2
1.4
50
1.6
Page 2
100
1.8