2KBP10M-E4/51 Vishay, 2KBP10M-E4/51 Datasheet - Page 3

• Manufacturer Part Number: 2KBP10M-E4/51
• Description: RECTIFIER BRIDGE 2A 1000V KBPM
• Manufacturer: Vishay

Specifications of 2KBP10M-E4/51

• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 2A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBPM)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Max Surge Current: 60 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 165 C
• Length: 15.24 mm
• Width: 5.08 mm
• Height: 11.68 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +165°C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1kV
• Rms Voltage (max): 700V
• Peak Non-repetitive Surge Current (max): 60A
• Avg. Forward Curr (max): 2@Ta=55CA
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case KBPM
• Operating Temp Range: -55C to 165C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2KBP10M-E4/1; 2KBP10M-E4/1; 2KBP10M-E4/1GI; 2KBP10M-E4/1GI; 2KBP10M-E4/1TR; 2KBP10M-E4/1TR; 2KBP10M-E4/51GI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
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For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3