DF01S-E3/77 Vishay, DF01S-E3/77 Datasheet - Page 3

DIODE GPP 1A 100V 4SMD

DF01S-E3/77

Manufacturer Part Number
DF01S-E3/77
Description
DIODE GPP 1A 100V 4SMD
Manufacturer
Vishay
Datasheet

Specifications of DF01S-E3/77

Voltage - Peak Reverse (max)
100V
Current - Dc Forward (if)
1A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
4-SMD (DFS)
Product
Single Phase Bridge
Peak Reverse Voltage
100 V
Maximum Rms Reverse Voltage
70 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.1V
Diode Mounting Type
SMD
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DF01S-E3/45

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF01S-E3/77
Manufacturer:
FAIRCHILD
Quantity:
30
Company:
Part Number:
DF01S-E3/77
Quantity:
70 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88573
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
0.320 (8.13)
0.335 (8.51)
0.205 (5.2)
T
0.195 (5.0)
= 125 °C
J
0.8
40
= 50 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
T
Pulse Width = 300 µs
1 % Duty Cycle
Case Style DFS
1.0
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
DF005S thru DF10S
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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