B2S-E3/80 Vishay, B2S-E3/80 Datasheet - Page 3

• Manufacturer Part Number: B2S-E3/80
• Description: DIODE BRIDGE0.5A 200V MBS
• Manufacturer: Vishay

Specifications of B2S-E3/80

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-269AA (MBS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 30 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.95 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88893
Revision: 01-Feb-08
100
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
0.114 (2.90)
0.094 (2.40)
Reverse Voltage (V)
1
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
0.161 (4.10)
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For technical questions within your region, please contact one of the following:
0.029 (0.74)
0.017 (0.43)
10
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
0.105 (2.67)
0.095 (2.41)
B2S, B4S & B6S
0.272 MAX.
(6.91 MAX.)
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3