2W10G-E4/51 Vishay, 2W10G-E4/51 Datasheet - Page 3

• Manufacturer Part Number: 2W10G-E4/51
• Description: RECTIFIER BRIDGE 2A 1000V WOG
• Manufacturer: Vishay

Specifications of 2W10G-E4/51

• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 1000V
• Current - Dc Forward (if): 2A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: WOG
• Product: Single Phase Bridge
• Peak Reverse Voltage: 1000 V
• Maximum Rms Reverse Voltage: 700 V
• Max Surge Current: 60 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 9.86 mm
• Width: 8.84 mm
• Height: 5.6 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• No. Of Phases: 1
• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2W10G; 2W10G/1; 2W10G/1

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88528
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
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1.0
T
T
T
J
J
J
60
= 100 °C
= 25 °C
= 125 °C
1.2
80
1.4
0.220 (5.6)
0.160 (4.1)
0.308 (7.82)
0.348 (8.84)
0.032 (0.81)
0.028 (0.71)
100
1.6
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.180 (4.6)
1.0 (25.4) MIN.
100
100
10
10
0.1
1
0.220 (5.6)
0.180 (4.6)
Figure 5. Typical Junction Capacitance Per Diode
1
0.060 (1.52)
0.01
0.020 (0.51)
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.1
2W005G thru 2W10G
Reverse Voltage (V)
t - Heating Time (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3