MB4M-E3/45 Vishay, MB4M-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MB4M-E3/45
• Description: DIODE GPP 0.5A 400V MBM 4DIP
• Manufacturer: Vishay

Specifications of MB4M-E3/45

• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.500", 12.70mm)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 400 V
• Maximum Rms Reverse Voltage: 280 V
• Max Surge Current: 35 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.83 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88660
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
T
J
0.7
= 150 °C
T
T
J
J
40
= 125 °C
= 25 °C
0.106 (2.70)
0.090 (2.30)
0.029 (0.74)
0.017 (0.43)
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0.9
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
80
1.3
0.190 (4.83)
0.179 (4.55)
0.105 (2.67)
0.095 (2.41)
100
1.5
Case Style MBM
0.161 (4.10)
0.144 (3.65)
0.148 (3.75)
0.132 (3.35)
0.049 (1.24)
0.039 (0.99)
10° to 15°
0.205 (5.21)
0.195 (4.95)
30
25
20
15
10
0.147 (3.73)
0.137 (3.48)
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
MB2M, MB4M & MB6M
1
Reverse Voltage (V)
0.028 (0.71)
0.020 (0.51)
0.016 (0.41)
0.006 (0.15)
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3