MB6M-E3/45 Vishay, MB6M-E3/45 Datasheet - Page 2

• Manufacturer Part Number: MB6M-E3/45
• Description: DIODE GPP 0.5A 600V MBM 4DIP
• Manufacturer: Vishay

Specifications of MB6M-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 500mA
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.500", 12.70mm)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Max Surge Current: 35 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 4.83 mm
• Width: 4.1 mm
• Height: 2.7 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Rms Voltage (max): 420V
• Peak Non-repetitive Surge Current (max): 35A
• Avg. Forward Curr (max): 800mA
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case MBM
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

MB2M, MB4M & MB6M
Vishay General Semiconductor
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
drop per diode
Maximum DC reverse current at rated
DC blocking voltage per diode
Typical junction capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
MB2M-E3/45
A
= 25 °C unless otherwise noted)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 1. Derating Curve for Output Rectified Current
0.1
0
0
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
20
40
Ambient Temperature (°C)
UNIT WEIGHT (g)
60
Aluminum Substrate
[e-mail], [e-mail], [e-mail]
For technical questions within your region, please contact one of the following:
80
0.22
100
(1)
120
TEST CONDITIONS
0.4 A
T
T
A
A
PREFERRED PACKAGE CODE
= 25 °C
= 125 °C
140
A
= 25 °C unless otherwise noted)
160
A
= 25 °C unless otherwise noted)
45
SYMBOL
SYMBOL
R
R
R
V
C
I
θJA
θJA
θJL
R
F
J
Figure 2. Maximum Non-Repetitive Peak Forward Surge
35
30
25
20
15
10
MB2M
MB2M
5
0
BASE QUANTITY
1
f = 50 Hz
100
Current Per Diode
1.0 Cycle
Number of Cycles
MB4M
MB4M
70
20
85
100
1.0
5.0
13
(1)
(2)
(1)
10
T
Single Half Sine-Wave
A
= 40 °C
f = 60 Hz
DELIVERY MODE
Document Number: 88660
MB6M
MB6M
Tube
Revision: 01-Feb-08
100
UNIT
UNIT
°C/W
µA
pF
V