2KBP02M/1 Vishay, 2KBP02M/1 Datasheet - Page 3

• Manufacturer Part Number: 2KBP02M/1
• Description: RECTIFIER BRIDGE 2A 200V KBPM
• Manufacturer: Vishay

Specifications of 2KBP02M/1

• Diode Type: Single Phase
• Package / Case: 4-SIP (KBPM)
• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Forward Continuous Current: 2 A
• Max Surge Current: 60 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 165 C
• Length: 15.24 mm
• Width: 5.08 mm
• Height: 11.68 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Peak Reflow Compatible (260 C): No
• Current Rating: 2A
• Leaded Process Compatible: No
• Forward Voltage: 1.1V
• Forward Current If: 2A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 2KBP02M; 2KBP02M; 2KBP02M/1; 2KBP02M/1GI

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88532
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.2
Instantaneous Forward Voltage (V)
20
0.4
40
0.6
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For technical questions within your region, please contact one of the following:
T
T
T
0.8
T
Pulse Width = 300 µs
1 % Duty Cycle
J
J
J
60
J
= 25 °C
= 125 °C
= 100 °C
= 25 °C
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
1.0
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
2KBP005M thru 2KBP10M, 3N253 thru 3N259
1.2
(15.2)
0.60
MIN.
100
1.4
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3