G3SBA60L-E3/45 Vishay, G3SBA60L-E3/45 Datasheet - Page 3

• Manufacturer Part Number: G3SBA60L-E3/45
• Description: DIODE GPP 1PH 4A 600V GBU
• Manufacturer: Vishay

Specifications of G3SBA60L-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 2.3A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBU)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88606
Revision: 15-Dec-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.8
20
T
A
T
1.2
= 125 °C
40
A
0.020 R (TYP.)
= 25 °C
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0.100 (2.54)
0.085 (2.16)
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
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1.6
60
0.080 (2.03)
0.065(1.65)
Polarity shown on front side of case, positive lead by beveled corner
2.0
80
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
2.4
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Style GBU
0.043 (1.10)
0.035 (0.90)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
G3SBA20, G3SBA60 & G3SBA80
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
0.140 (3.56)
0.130 (3.30)
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
0.022 (0.56)
0.018 (0.46)
0.085 (2.16)
0.075 (1.90)
5° TYP.
9° TYP.
1
10
10
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100
100
3