VSIB460-E3/45 Vishay, VSIB460-E3/45 Datasheet - Page 3
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VSIB460-E3/45
Manufacturer Part Number
VSIB460-E3/45
Description
DIODE 4A 600V SGL BRIDGE 4SIP
Manufacturer
Vishay
Datasheet
1.VSIB480-E345.pdf
(4 pages)
Specifications of VSIB460-E3/45
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
2.3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GSIB-5S)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89119
Revision: 14-Jul-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.3
20
Percent of Rated Peak Reverse Voltage (%)
30
Instantaneous Forward Voltage (V)
T
0.057 (1.45)
0.041 (1.05)
0.075 (1.90)
0.059 (1.50)
0.083 (2.10)
0.067 (1.70)
0.043 (1.10)
0.035 (0.90)
J
0.5
T
= 150 °C
J
40
= 150 °C
50
0.7
T
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
J
J
For technical questions within your region, please contact one of the following:
60
= 125 °C
= 125 °C
T
0.9
J
70
0.996 (25.3)
0.972 (24.7)
= 25 °C
T
J
= 25 °C
80
1.1
90
100
1.3
0.303 (7.7)
0.287 (7.3)
Case Style GSIB-3S
New Product
0.157 (4.0) Ref.
0.146 (3.70)
0.130 (3.30)
0.602 (15.3)
0.579 (14.7)
0.709 (18.0)
0.669 (17.0)
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
PDD-Europe@vishay.com
Vishay General Semiconductor
0.382 (9.70)
0.366 (9.30)
VSIB420 thru VSIB480
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
0.031 (0.80)
0.024 (0.60)
1
0.189 (4.80)
0.173 (4.40)
0.150 (3.80)
0.134 (3.40)
0.114 (2.90)
0.098 (2.50)
Ø 0.134 (3.40)
Ø 0.122 (3.10)
10
10
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100
100
3