GBU4M-E3/45 Vishay, GBU4M-E3/45 Datasheet - Page 2

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GBU4M-E3/45

Manufacturer Part Number
GBU4M-E3/45
Description
DIODE GPP 1PH 4A 1000V GPP GBU
Manufacturer
Vishay
Datasheets

Specifications of GBU4M-E3/45

Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
3A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (GBU)
Product
Single Phase Bridge
Peak Reverse Voltage
1000 V
Maximum Rms Reverse Voltage
700 V
Max Surge Current
150 A
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
3.56 mm
Height
18.8 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
150A
Avg. Forward Curr (max)
4A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBU
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
GBU4M-E3/51
GBU4A thru GBU4M
Vishay General Semiconductor
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum
instantaneous
forward drop per diode
Maximum DC
reverse current at
rated DC blocking
voltage per diode
Typical junction
capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION
PREFERRED P/N
GBU4J-E3/45
GBU4J-E3/51
A
= 25 °C unless otherwise noted)
4.0
3.0
2.0
1.0
0
Figure 1. Derating Curve Output Rectified Current
0
Heatsink Mounting, T
1.6 x 1.6 x 0.06" Thickness
(4.0 x 4.0 x 0.15 cm) Al. Plate
P.C.B. Mounting, T
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
50
Temperature (°C)
UNIT WEIGHT (g)
TEST CONDITIONS SYMBOL
A
4.0 A
T
T
4.0 A, 1 MHz
C
A
A
= 25 °C
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
3.565
3.565
For technical questions within your region, please contact one of the following:
100
PREFERRED PACKAGE CODE
SYMBOL
R
R
θJA
θJC
A
V
C
I
R
F
J
= 25 °C unless otherwise noted)
150
(2)
(1)
A
= 25 °C unless otherwise noted)
GBU4A
GBU4A
45
51
GBU4B
GBU4B
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge
150
100
GBU4D
GBU4D
50
0
BASE QUANTITY
1
GBU4G
GBU4G
250
20
500
1.0
5.0
4.2
22
Number of Cycles at 60 Hz
Current Per Diode
GBU4J
GBU4J
1.0 Cycle
10
GBU4K
GBU4K
T
Single Sine-Wave
DELIVERY MODE
J
45
Document Number: 88614
= T
J
Paper tray
max.
Tube
Revision: 15-Dec-08
GBU4M
GBU4M
100
UNIT
UNIT
°C/W
µA
pF
V

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