GBU8G-E3/45 Vishay, GBU8G-E3/45 Datasheet - Page 3

• Manufacturer Part Number: GBU8G-E3/45
• Description: RECTIFIER BRIDGE 8A 400V GBU
• Manufacturer: Vishay

Specifications of GBU8G-E3/45

• Lead Free Status: Contains lead
• Voltage - Peak Reverse (max): 400V
• Current - Dc Forward (if): 3.9A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 400 V
• Maximum Rms Reverse Voltage: 280 V
• Forward Continuous Current: 8 A
• Max Surge Current: 200 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 22.3 mm
• Width: 3.56 mm
• Height: 18.8 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1V
• Diode Mounting Type: Through Hole
• Operating Temperature Range: -55°C To +150°C
• Bridge: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: GBU8G; GBU8G; GBU8G/45; GBU8G/45

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88616
Revision: 15-Dec-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 150 °C
0.6
50 - 400 V
600 - 1000 V
Instantaneous Forward Voltage (V)
20
T
J
= 125 °C
0.8
40
T
0.020 R (TYP.)
J
[e-mail], [e-mail], [e-mail]
0.100 (2.54)
0.085 (2.16)
= 25 °C
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead by beveled corner
J
= 25 °C
1.2
80
1.4
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
1.6
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Type GBU
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
50 - 400 V
600 - 1000 V
0.140 (3.56)
0.130 (3.30)
0.1
GBU8A thru GBU8M
Reverse Voltage (V)
t - Heating Time (s)
1
0.026 (0.66)
0.020 (0.51)
0.085 (2.16)
0.075 (1.90)
9° TYP.
5° TYP.
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3