VSIB660-E3/45 Vishay, VSIB660-E3/45 Datasheet - Page 2

• Manufacturer Part Number: VSIB660-E3/45
• Description: DIODE 6A 600V SGL BRIDGE 4SIP
• Manufacturer: Vishay

Specifications of VSIB660-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 2.8A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GSIB-5S)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Max Surge Current: 180 A
• Forward Voltage Drop: 0.95 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Length: 30 mm
• Width: 4.6 mm
• Height: 20 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 600V
• Rms Voltage (max): 420V
• Peak Non-repetitive Surge Current (max): 180A
• Avg. Forward Curr (max): 2.8A
• Rev Curr: 10uA
• Forward Voltage: 0.95V
• Package Type: Case GSIB-5S
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

VSIB620 thru VSIB680
Vishay General Semiconductor
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
VSIB660-E3/45
A
= 25 °C unless otherwise noted)
10
8
6
4
2
0
Figure 1. Derating Curve Output Rectified Current
0
Heatsink Mounting, T
P.C.B. Mounting, T
50
Temperature (°C)
UNIT WEIGHT (g)
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For technical questions within your region, please contact one of the following:
7.0
C
A
100
TEST CONDITIONS
3.0 A
T
T
A
A
= 25 °C
= 125 °C
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
150
A
= 25 °C unless otherwise noted)
45
SYMBOL
SYMBOL
R
R
V
I
θJC
θJA
R
F
VSIB620
VSIB620
Figure 2. Maximum Non-Repetitive Peak Forward Surge
210
180
150
120
90
60
30
0
BASE QUANTITY
1
VSIB640
VSIB640
20
Number of Cycles at 60 Hz
3.4
Current Per Diode
22
0.95
1.0 Cycle
250
10
(2)
(1)
VSIB660
VSIB660
10
DELIVERY MODE
Document Number: 84656
T
Single Sine-Wave
J
= T
VSIB680
VSIB680
J
Tube
Max.
Revision: 15-Dec-08
100
UNIT
UNIT
°C/W
µA
V