BU2508-E3/45 Vishay, BU2508-E3/45 Datasheet - Page 3

RECTIFIER BRIDGE 800V 25A BU

BU2508-E3/45

Manufacturer Part Number
BU2508-E3/45
Description
RECTIFIER BRIDGE 800V 25A BU
Manufacturer
Vishay
Datasheet

Specifications of BU2508-E3/45

Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
3.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
4-SIP (BU)
Product
Single Phase Bridge
Peak Reverse Voltage
800 V
Max Surge Current
300 A
Forward Voltage Drop
1.05 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
22.3 mm
Width
4.1 mm
Height
18.8 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
800V
Peak Non-repetitive Surge Current (max)
300A
Avg. Forward Curr (max)
3.5A
Rev Curr
5uA
Forward Voltage
1.05V
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU2508-E3/45
Manufacturer:
MINI
Quantity:
5 000
Part Number:
BU2508-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 84805
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
0.1
50
40
30
20
10
10
Figure 4. Typical Forward Characteristics Per Diode
0
1
0.3
0
0.4
Figure 3. Forward Power Dissipation
T
J
5
Instantaneous Forward Voltage (V)
= 125 °C
0.5
Average Forward Current (A)
T
J
= 150 °C
0.6
10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0.7
For technical questions within your region, please contact one of the following:
15
0.8
T
0.9
20
J
= 25 °C
1.0
25
This datasheet is subject to change without notice.
1.1
1.2
30
New Product
1000
1000
100
100
0.1
10
Figure 5. Typical Reverse Characteristics Per Diode
10
1
Figure 6. Typical Junction Capacitance Per Diode
0.1
10
DiodesEurope@vishay.com
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
J
= 150 °C
30
BU2506 thru BU2510
Reverse Voltage (V)
40
1
T
J
50
T
= 125 °C
J
= 25 °C
60
70
10
www.vishay.com/doc?91000
80
90
www.vishay.com
100
100
3

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