GBPC3502W-E4/51 Vishay, GBPC3502W-E4/51 Datasheet - Page 4

• Manufacturer Part Number: GBPC3502W-E4/51
• Description: DIODE 1PH 35A 200V GBPC-W
• Manufacturer: Vishay

Specifications of GBPC3502W-E4/51

• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 35A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: GBPC-W
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Forward Continuous Current: 35 A
• Max Surge Current: 400 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 28.8 mm
• Width: 28.8 mm
• Height: 7.62 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 35A
• Forward Voltage Vf Max: 1.1V
• Diode Mounting Type: Through Hole
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 400A
• Avg. Forward Curr (max): 35A
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case GBPC-W
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Screw
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
Fig. 7 - Typical Junction Capacitance Per Diode
1
0.220 (5.59)
0.200 (5.08)
#10 Screw
Hole for
0.310 (7.87)
0.290 (7.36)
1.115 (28.3)
1.135 (28.8)
0.042 (1.07)
0.038 (0.97)
0.24 (6.0)
0.18 (4.6)
DIA.
Reverse Voltage (V)
DIA.
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
10
GBPC-W
0.430 (10.9)
0.470 (11.9)
1.135 (28.8)
0.732 (18.6)
0.692 (17.6)
1.115 (28.3)
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
This document is subject to change without notice.
0.44 (11.7)
0.50 (12.7)
0.18 (4.6)
0.24 (6.0)
0.732 (18.6)
0.692 (17.6)
(31.8)
100
MIN.
1.25
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.200 (5.08)
0.220 (5.59)
#10 Screw
Hole for
0.034 (0.86)
0.030 (0.76)
0.094 (2.4)
1000
0.632 (16.1)
Fig. 8 - Typical Transient Thermal Impedance Per Diode
0.672 (17.1)
0.034 (0.86)
0.030 (0.76)
100
DIA.
10
1
0.01
[e-mail]
DIA.
GBPC
0.1
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
t - Heating Time (s)
(6.35)
0.25
1
AC
www.vishay.com/doc?91000
0.582 (14.8)
0.542 (13.8)
Document Number: 88612
T
f = 1.0 MHz
V
0.840 (21.3)
0.740 (18.8)
J
sig
10
= 25 °C
= 50 mVp-p
Revision: 28-Mar-11
100