FUO22-12N IXYS, FUO22-12N Datasheet - Page 3

• Manufacturer Part Number: FUO22-12N
• Description: RECT BRIDGE 3PHASE I4-PAC-5
• Manufacturer: IXYS

Specifications of FUO22-12N

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 28A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS i4-PAC™
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.2kV
• Peak Non-repetitive Surge Current (max): 106A
• Avg. Forward Curr (max): 28A
• Rev Curr: 5uA
• Package Type: ISOPLUS i5-Pac
• Operating Temp Range: -55C to 150C
• Pin Count: 5
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Vrrm, (v): 1200
• Vrsm, (v): 1300
• Idavm, (a): 28
• @ Th, (°c): -
• @ Tc, (°c): 90
• Ifsm, 10 Ms, Tvj = 45°c, (a): 100
• Vt0, (v): 0.80
• Rt, (mohms): 30.0
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 4.00
• Rthjh, Per Chip, (k/w): 5.00
• Package Style: ISOPLUS i4-PAC™ (5 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
[W]
[K/W]
P
Z
[A]
I
tot
F
thJC
100
40
30
20
10
80
60
40
20
0
0
4
3
2
1
0
0.0
0
1
Fig. 
Fig. 3
Fig. 5
T
VJ
0.5
= 125°C
Forward current vs.
voltage drop per diode
10
Power dissipation vs. direct output current and ambient temperature
Transient thermal impedance junction to case per diode
I
dAVM
V
1.0
F
[V]
10
T
[A]
VJ
20
= 25°C
1.5
2.0
Zeit [ms]
0
100
I
[A]
FSM
90
80
70
60
50
40
30
20
10
0
0.01
50
Fig. 2 Surge overload current per diode
T
amb
I
1000
FSM
[°C]
: crest value. t: duration
100
t [s]
0.1
R
0.5
1
1.5
2
3
4
T
T
thKA
VJ
VJ
= 125°C
= 45°C
K/W
10000
150
1
I
dAVM
[A]
[A
I
Constants for Z
100
2
2
t
10
40
30
20
10
s]
Fig. 4

2
3
4
5
i
0
1
0
Fig. 2
T
VJ
0.0007604
R
0.03587
= 45°C
0.2439
0.773
0.502
thi
Maximum forward current
at case temperature T
(K/W)
rect. 120°
50
I
per diode
2
T
t versus time (-0 ms)
thJC
C
T
t [ms]
VJ
calculation:
[°C]
= 125°C
0.0000
0.00005
FUO 22
100
0.0
0.067
0.028
t
i
(s)
C
150
10
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