FUE30-12N1 IXYS, FUE30-12N1 Datasheet
FUE30-12N1
Manufacturer Part Number
FUE30-12N1
Description
RECT BRIDGE FAST 3PHASE I4-PAC-5
Manufacturer
IXYS
Datasheet
1.FUE30-12N1.pdf
(3 pages)
Specifications of FUE30-12N1
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
30A
Diode Type
Three Phase
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
130ns
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Vrrm, (v)
1200
Vrsm, (v)
-
Idavm, (a)
30
@ Th, (°c)
-
@ Tc, (°c)
90
Ifsm, 10 Ms, Tvj = 45°c, (a)
80
Vt0, (v)
-
Rt, (mohms)
-
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
2.3
Rthjh, Per Chip, (k/w)
2.45
Package Style
ISOPLUS i4-PAC (5 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fast Three Phase
Rectifier Bridge
in ISOPLUS i4-PAC
Symbol
V
I
I
I
E
P
Symbol
V
I
I
t
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
Rectifier Bridge
FAV
D(AV)M
FSM
R
RM
R
rr
RRM
AS
tot
F
thJC
Conditions
T
T
T
I
T
Conditions
I
V
I
V
(per diode)
AS
F
F
C
C
VJ
C
R
R
= 10 A; T
= 15 A; di
= 9 A; L
= 90°C; sine 180° (per diode)
= 90°C
= 25°C
= V
= 600 V
= 25°C; t = 10 ms; sine 50 Hz
RRM
; T
T
AS
T
VJ
VJ
F
VJ
VJ
=180 µH; T
/dt = -400 A/µs; T
= 25°C
= 125°C
= 25°C
= 125°C
TM
(bridge)
(per diode)
C
= 25°C; non repetitive
VJ
(T
= 125°C
VJ
= 25°C, unless otherwise specified)
min.
Characteristic Values
Maximum Ratings
1
3
4
5
2
130
typ.
2.2
1.6
0.1
16
1200
max.
8.7 mJ
2.6
0.1 mA
2.3 K/W
12
50
30
80
mA
W
ns
V
A
A
A
V
V
A
V
I
t
Features
• HiPerFRED
• ISOPLUS i4-PAC
Applications
• high frequency rectifiers, output
• three phase mains rectifiers with
D(AV)M
rr
- fast and soft reverse recovery –
- avalanche rated
- low leakage current
- isolated back surface
- low coupling capacity between pins
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
rectifiers of switched mode power
supplies
minimized electromagnetic emissions
RRM
and heatsink
1
low switching losses
5
= 1200 V
= 30 A
= 130 ns
TM
FUE 30-12N1
Epitaxial Diodes
TM
package
1 - 3
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FUE30-12N1 Summary of contents
Page 1
... 600 (per diode) thJC Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Maximum Ratings (bridge) = 25°C; non repetitive C (per diode) Characteristic Values (T = 25° ...
Page 2
... pin - backside metal with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved Dimensions 0.0394") Maximum Ratings °C -55...+150 °C -55...+125 2500 V~ 20...120 N Characteristic Values min. ...
Page 3
... T VJ Fig. 4 Dynamic parameters Q versus K thJC 0.1 0.01 0.001 0.0001 0.001 0.01 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 3 100°C µ 600 ...