VBE55-12NO7 IXYS, VBE55-12NO7 Datasheet
VBE55-12NO7
Manufacturer Part Number
VBE55-12NO7
Description
DIODE BRIDGE FAST DIODE ECO-PAC1
Manufacturer
IXYS
Datasheet
1.VBE55-12NO7.pdf
(2 pages)
Specifications of VBE55-12NO7
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
59A
Diode Type
Single Phase
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
40ns
Mounting Type
PCB
Package / Case
ECO-PAC1
Vrrm, (v)
1200
Vvrms, (v)
-
Idavm, (a)
59
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
200
Vt0, (v)
1.31
Rt, (mohms)
15
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
0.9
Rthjh, Per Chip, (k/w)
1.2
Package Style
ECO-PAC 1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ECO-PAC
Single Phase Rectifier Bridge
Symbol
I
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
I
t
a
d
d
Data according to IEC 60747 refer to a single diode unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1200
V
dAV
dAVM
FSM
2
R
RM
rr
T
t
VJ
VJM
stg
S
A
ISOL
F
T0
thJC
thCH
d
V
RSM
for resistive load at bridge output.
1200
V
RRM
V
Conditions
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M4)
typ.
Conditions
V
V
I
for power-loss calculations only
per diode; DC current
per diode, DC current, typ.
I
V
I
Max. allowable acceleration
creeping distance on surface
creepage distance in air
ISOL
F
F
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
R
= 1 A; -di/dt = 200 A/µs; V
= 30 A
= 50 A, -diF/dt = 100 A/µs
= 85°C, module
= 0
= 0
= 0
= 0
= V
= V
= 100 V, L = 0.05 mH, T
= 45°C
= T
= 45°C
= T
£ 1 mA
RRM
RRM
TM
VJM
VJM
Typ
VBE 55-12NO7
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
T
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
VJM
VJ
R
= 100°C
= 30 V, T
VJ
= 25°C
Characteristic Values
1.5-2/14-18
-40...+150
-40...+125
Maximum Ratings
N
A
typ.
40
3000
3600
6
11.2
200
220
170
190
200
205
145
150
150
9.7
59
90
19
50
0.25 mA
2.71
1.31
11.4
max.
1.0 mA
0.9 K/W
0.3 K/W
tbd
15 mW
Nm/lb.in.
m/s
mm
mm
A
A
A
A
V~
V~
°C
°C
°C
ns
2
2
2
2
A
A
A
A
A
A
V
V
A
D
K
g
s
s
s
s
2
I
V
t
Features
• Package with DCB ceramic
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
• Small and light weight
• Low noise switching
Dimensions in mm (1 mm = 0.0394")
dAV
rr
base plate in low profile
frequency
cycling capability
RRM
= 59 A
= 1200 V
= 40 ns
VBE 55-12NO7
1 - 2
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VBE55-12NO7 Summary of contents
Page 1
... S d creepage distance in air A Data according to IEC 60747 refer to a single diode unless otherwise stated for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved A N Maximum Ratings 59 90 ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.001 0.01 Fig. 7 Transient thermal resistance junction to case NOTE: Fig Fig. 6 shows typical values © 2000 IXYS All rights reserved 100° 600V 60A 30A 15A 100 ...