VUO22-14NO1 IXYS, VUO22-14NO1 Datasheet - Page 3

• Manufacturer Part Number: VUO22-14NO1
• Description: RECT BRIDGE 3PH 25A 1400V V1-A
• Manufacturer: IXYS

Specifications of VUO22-14NO1

• Voltage - Peak Reverse (max): 1400V
• Current - Dc Forward (if): 25A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: V1-A
• Vrrm, (v): 1400
• Vrsm, (v): 1500
• Idavm, (a): 22
• @ Th, (°c): 90
• @ Tc, (°c): -
• Ifsm, 10 Ms, Tvj = 45°c, (a): 100
• Vt0, (v): 0.80
• Rt, (mohms): 40
• Tvjm, (°c): 130
• Rthjc, Per Chip, (k/w): -
• Rthjh, Per Chip, (k/w): 3.10
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Zth
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
P
I
JK
F
tot
K/W
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
W
80
60
40
20
A
5
0
0
10
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
-3
T
T
5
0.5
VJ
VJ
voltage drop per diode
= 25 °C
= 130 °C
10
1.0
10
-2
15
1.5
20
ma x.
typ.
2.0
V
25
I
10
F
dAVM
V
-1
A
2.5
0
I
FSM
25
100
Fig. 2 Surge overload current per diode
80
60
40
20
A
0
10
10
-3
0
50
I
FSM
: Crest value. t: duration
Zth
75
10
JK
-2
10
10 0
1
R
0.5
1
1.5
2
3
4
6
thKA
10
12 5
s
K/W
-1
t
50 Hz
0.8 x V
t
°C
T
s
A
150
10
RRM
2
10
0
I
dAVM
I
2
d
Constants for Z
100
t
A
10
30
25
20
15
10
2
A
s
5
0
1
2
3
4
i
1
0
Fig. 5 Maximum forward current
Fig. 3 I
25
T
R
VJ
at case temperature
(1-10 ms) per diode
thi
0.005
0.1
1.635
1.35
2
= 45 °C
t versus time
50
(K/W)
thJC
calculation:
75
T
VUO 22
VJ
= 130 °C
10 0
0.008
0.02
0.05
0.4
t
i
(s)
12 5
20100503a
ms
t
T
°C
3 - 3
K
150
1
0