VUO70-16NO7 IXYS, VUO70-16NO7 Datasheet - Page 2

• Manufacturer Part Number: VUO70-16NO7
• Description: RECT BRIDGE 3PH 70A 1600V FO-T-A
• Manufacturer: IXYS

Specifications of VUO70-16NO7

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 70A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: FO-T-A
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.6kV
• Peak Non-repetitive Surge Current (max): 600A
• Avg. Forward Curr (max): 70A
• Rev Curr: 500uA
• Forward Voltage: 1.7V
• Operating Temp Range: -40C to 150C
• Pin Count: 5
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, (v): 1600
• Vrsm, (v): 1700
• Idavm, (a): 70
• @ Th, (°c): -
• @ Tc, (°c): 100
• Ifsm, 10 Ms, Tvj = 45°c, (a): 550
• Vt0, (v): 0.80
• Rt, (mohms): 8.0
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 1.45
• Rthjh, Per Chip, (k/w): 1.90
• Package Style: FO-T-A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

© 2010 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
PVTOT
K/W
[W]
200
175
150
125
100
Z th
I F
75
50
25
30
25
20
15
10
3
2
1
A
0
5
0
Fig. 1 Forward current versus
Fig. 4
Fig. 6
PSD 41
T=150°C
IFAVM
V F
voltage drop per diode
20
Power dissipation versus direct output current
and ambient temperature
0.01
Transient thermal impedance per diode/thyristor, calculated
T=25°C
1
40
sin.180°
rec.120°
rec.60°
rec.30°
V
0.1
DC
1.5
60
[A]
t[s]
0
0.51
0.76
1.26
2.76
Tamb
1
0.38 0.26 = RTHCA [K/W]
Fig. 2 Surge overload current per diode
50
I
------
I FSM
F(OV)
1.6
1.4
1.2
0.8
0.6
0.4
10
1
0
10
I
Z thJK
Z thJC
FSM
100
: Crest value. t: duration
10
TVJ=45°C
1
1/2 V RRM
[K]
0 V RRM
1 V RRM
t[ms]
550
150
I
FSM
10
100
TC
105
110
115
120
125
130
135
140
145
°C
150
TVJ=150°C
(A)
2
500
10
3
I dAV
[A]
10
10
10
As 2
80
60
40
20
0
4
3
2
1
Fig.5
Fig. 3
TVJ=45°C
50
VUO 70-16NO7
2
Maximum forward current
at case temperature
I
per diode or thyristor
2
T (°C)
t [ms]
dt versus time (1-10ms)
C
100
4
TVJ=150°C
sin.180°
rec.120°
150
rec.60°
rec.30°
6
DC
200
10
20100709a
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