VUB72-12NO1 IXYS, VUB72-12NO1 Datasheet - Page 2

• Manufacturer Part Number: VUB72-12NO1
• Description: RECT BRIDGE 3PH 1200V V1-A
• Manufacturer: IXYS

Specifications of VUB72-12NO1

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 110A
• Diode Type: Three Phase - IGBT with Diode
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 130ns
• Mounting Type: PCB
• Package / Case: V1-A
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.2kV
• Avg. Forward Curr (max): 40A
• Rev Curr: 20uA
• Forward Voltage: 1.1V
• Operating Temp Range: -40C to 150C
• Pin Count: 8
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, Rect, (v): 1200
• Idav, Rec, (a): 110
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 35
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 15
• Trr, Fast Diode, (ns): 130
• Package Style: V1-A-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
I
V
t
(SCSOA)
Symbol
(T
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
R
B
Symbol
I
T
T
V
M
Symbol
d
Weight
© 2006 IXYS All rights reserved
Symbol
Chopper Transistor T
C25
C80
CM
CES
GES
d(off)
Module
RMS
SC
d(on)
r
f
Temperature Sensor NTC
VJ
stg
A
GES
CEK
CE(sat)
GE(th)
on
off
ISOL
CES
ies
Gon
thJC
thJH
25
25/100
d
VJ
, d
= 25°C, unless otherwise specified)
S
Conditions
T
DC; T
DC; T
V
RBSOA; L = 100 µH
R
Conditions
I
I
V
V
V
V
with heat transfer paste, see mounting instructions
Conditions
T = 25°C
Conditions
per pin
I
Mounting torque (M5)
Conditions
C
C
ISOL
VJ
GE
CE
CE
CE
CE
G
= 25 A; V
= 1 mA; V
Inductive load, T
V
V
= 39 Ω; non repetitive
= 600 V; V
= 25°C to 150°C
= V
= 0 V; V
= 25 V; V
= ± 15 V; R
≤ 1 mA; 50/60 Hz; t = 1 min
V
CE
GE
GE
C
C
CES
= 600 V; I
= ± 15 V; R
= 25°C
= 80°C
= ± 15 V; V
; V
GE
GE
GE
GE
R(T) = R
GE
= 15 V; T
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= 15 V; I
= 39 Ω; T
C
CE
G
= 25 A
CE
= 39 Ω
VJ
= 900 V; T
T
25
T
= 125°C
VJ
VJ
VJ
VJ
• e B
C
= 25°C
= 125°C
=
= 125°C
VJ
= 35 A
= 125°C
25/100
25°C
VJ
(
1
T
= 125°C
298K
1
)
min.
min.
4.5
Characteristic Values
Characteristic Values
Characteristic Values
5
-40...+150
-40...+125
Maximum Ratings
Maximum Ratings
3560
440
150
2 - 2.5
typ.
typ.
typ.
1.9
2.1
0.1
3.8
2.0
2.0
80
50
50
1200
3600
2.2
35
± 20
V
100
CES
50
35
50
10
max.
max.
200
0.1 mA
2.4
6.5
0.6 K/W
1.2 K/W
Nm
mm
V~
mA
°C
°C
µs
mJ
mJ
nC
kΩ
nA
nF
ns
ns
ns
ns
V
V
A
A
A
A
V
V
V
K
g
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
D1 - D6
Diode (typ. at T
T/D
IGBT (typ. at V
Free Wheeling Diode (typ. at T
4x45°
R2
0,5
V
V
V
25,75
0
0
0
15,8
= 1.25 V; R
Ø0,5
= 0.85 V; R
= 1.0 V; R
14
7
±0,15
GE
±1
J
±0,3
±0,3
31,6
51,5
= 125°C)
26
50
= 15 V; T
38,6
35
63
±0,2
14
±0,3
7
±0,3
±0,3
0
0
4,6
0
= 45 m Ω
0,5
= 32 m Ω
= 7 m Ω
5
±1
VUB 72
J
±1
+0,2
= 125°C)
J
= 125°C)
R1
2 - 4