VUB145-16NO1 IXYS, VUB145-16NO1 Datasheet - Page 6
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VUB145-16NO1
Manufacturer Part Number
VUB145-16NO1
Description
RECT BRIDGE 3PH 1600V 145A E2
Manufacturer
IXYS
Datasheet
1.VUB145-16NO1.pdf
(6 pages)
Specifications of VUB145-16NO1
Voltage - Peak Reverse (max)
1600V
Current - Dc Forward (if)
145A
Diode Type
Three Phase - IGBT with Diode
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
E2
Vrrm, Rect, (v)
1600
Idav, Rec, (a)
145
@ Th, Rect, (°c)
-
@ Tc, Rect, (°c)
80
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
100
Vrrm, Fast Diode, (v)
1200
If(av), Fast Diode, (a)
27
Trr, Fast Diode, (ns)
40
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[mJ]
[K/W]
E
Z
I
C
0.0001
off
thJC
0.001
0.01
250
200
150
100
0.1
50
10
0
8
6
4
2
0
1
10
Fig. 7 Typ. output characteristics
0
0
Fig. 10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
-5
V
V
V
R
T
E
GE
CE
GE
VJ
G
off
= 15 V
= 15 Ω
= 600 V
= ±15 V
= 125°C
1
10
-4
T
20
times versus collector current
VJ
V
2
= 25°C
CE
10
-3
[V]
3
40
T
I
t [s]
VJ
C
10
= 125°C
[A]
single pulse
-2
4
60
10
5
-1
t
[A]
I
F
10
70
60
50
40
30
20
10
80
0
0
t
d(off)
diode
IGBT
0
Fig. 8 Typ. forward characteristics
s
t
f
10
1200
1000
800
600
400
200
0
1
T
VJ
of free wheeling diode
[ns]
1
= 100°C
t
150°C
V
F
[Ω]
R
[V]
[mJ]
E
10000
off
1000
2
100
20
15
10
5
0
T
0
0
Fig. 13 Typ. thermistor resistance vs. temperature
VJ
E
Fig. 11 Typ. turn off energy and switching
off
= 25°C
V
V
I
T
C
VJ
3
CE
GE
= 600 V
= ±15 V
= 75 A
= 125°C
25
times versus gate resistor
20
V
[V]
GE
50
15
12
9
6
3
0
Fig. 9 Typ. turn on gate charge
40
0
T [°C]
R
G
75
VUB 145-16NO1
100
[Ω]
200
60
100
Q
V
I
C
CE
G
300
= 600 V
= 100 A
[nC]
125
400
80
t
d(off)
t
f
500
150
2000
1500
1000
500
0
20101007a
[ns]
600
6 - 6
t