2W02G Fairchild Semiconductor, 2W02G Datasheet
2W02G
Manufacturer Part Number
2W02G
Description
DIODE BRIDGE GPP 2.0A 200V WOB
Manufacturer
Fairchild Semiconductor
Datasheet
1.2W02G.pdf
(3 pages)
Specifications of 2W02G
Voltage - Peak Reverse (max)
200V
Current - Dc Forward (if)
2A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
WOB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2W02G
Manufacturer:
HY
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
Maximum Reverse Leakage Current,
per leg @ rated V
Maximum Forward Voltage Drop,
per bridge @ 2.0 A
I
Typical Junction Capacitance, per leg
I
i
P
R
R
T
T
2
Symbol
f(surge)
O
2.0 Ampere Glass Passivated Bridge Rectifiers
t rating for fusing
Absolute Maximum Ratings*
stg
J
D
*
**
Electrical Characteristics
JA
JL
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Features
•
•
•
•
Device mounted on PCB with 0.375" (9.5 mm) lead length.
V
Reliable low cost construction technique
High surge current capability.
Glass passivated junction.
Ideal for printed circuit board.
results in inexpensive product.
R
= 4.0 V, f = 1.0 MHz
Parameter
Average Rectified Current
Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
R
T
T
A
A
= 25 C
= 125 C
t < 8.3 ms
@ T
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Derate above 25 C
(Rated V
A
= 50 C
R
)
2W005G - 2W10G
Parameter
005G
50
50
35
T
A
= 25°C unless otherwise noted
T
A
01G
100
100
= 25°C unless otherwise noted
70
WOB
02G
200
200
140
Device
04G
400
280
400
500
5.0
1.1
10
19
Dimensions are in:
inches (mm)
Discrete POWER & Signal
06G
600
600
420
-55 to +150
-55 to +150
Value
0.217(5.5)
0.197(5.0)
3.13
0.220(5.6)
0.180(4.6)
2.0
60
25
40
15
POS.LEAD
1.2(30.5)
Technologies
MIN
08G
800
800
560
+
0.339(8.6)
0.358(9.1)
0.032(.81)
0.030(.76)
~
~
1000
1000
10G
700
DIA
DIA
Units
mW/ C
_
2W005G -2 W10G, Rev. A
C/W
C/W
W
A
A
1.0(25.4)
C
C
MIN
Units
0.220(5.6)
0.180(4.6)
A
2
pF
V
V
V
Sec
V
A
A
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Datasheet:
2W02G Summary of contents
Page 1
... C A Maximum Forward Voltage Drop, per bridge @ 2 rating for fusing t < 8.3 ms Typical Junction Capacitance, per leg 1.0 MHz R 1999 Fairchild Semiconductor Corporation 2W005G - 2W10G Dimensions are in: WOB T = 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A Device ...
Page 2
... AMBIENT TEMPERATURE ( C) Forward Characteristics 10 1 º Pulse Width = 300 s 2% Duty Cycle 0.1 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Glass Passivated Bridge Rectifiers Non-Repetitive Surge Current 150 175 1 2 º NUMBER OF CYCLES AT 60Hz Reverse Characteristics 100 10 1 0.1 1.2 1 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...