TGA8334-SCC TriQuint, TGA8334-SCC Datasheet - Page 6

• Manufacturer Part Number: TGA8334-SCC
• Description: Wireless Accessories 2.0-20GHz Power Amp AGC
• Manufacturer: TriQuint

Specifications of TGA8334-SCC

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004281

I
G
V
V
V
DSS
P
BVGD
BVGS
m
: Pinch-Off Voltage; V
: Transconductance;
: Maximum drain current (I
gate width.
: Breakdown Voltage, Gate-to-Source; gate-to-
: Breakdown Voltage, Gate-to-Drain; gate-to-
(V
TriQuint Semiconductor Texas Phone: [phone]
drain breakdown current (I
gate width.
source breakdown current (I
of gate width.
GS
) at zero volts.
FET Parameters
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
(
I
DSS
GS
VG1
for I
- IDS1
DS
DS
) with gate voltage
BD
= 0.5 mA/mm of
BS
) = 1.0 mA/mm of
)
) = 1.0 mA/mm
TABLE IV
V
up to a maximum of 3.5 V in search of the maximum
value of I
For all material types, V
and VDSP in search of the maximum value of I
This maximum I
Intermediate and Power material, IDS1 is measured
at V
pHEMT material, V
LNBECOLC, use V
V
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
GS
DS
= 0.0 V, drain voltage (V
fixed at 2.0 V, V
GS
Fax: [phone] Web: www.triquint.com
= VG1 = -0.5 V. For Low Noise, HFET and
DS
GD
; voltage for I
) measured is V
DS
Product Data Sheet
GS
Test Conditions
is recorded as IDS1. For
) measured is V
GS
GS
GS
= VG1 = -0.25 V. For
= VG1 = -0.10 V.
is swept to bring I
DS
DSS
is swept between 0.5 V
TGA8334-SCC
is recorded as VDSP.
BVGD
DS
) is swept from 0.5 V
and recorded as
April 25, 2003
BVGS
and recorded
DS
to
ds
.
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