TGS2313 TriQuint, TGS2313 Datasheet
TGS2313
Specifications of TGS2313
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TGS2313 Summary of contents
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... EW Receivers • Radar • Communications Systems Product Description The TriQuint TGS2313 is a 4-18 GHz Single Pole Triple Throw (SP3T) Switch. This part is designed using TriQuint’s proven standard VPIN production process. The TGS2313 provides a nominal 1.0 dB insertion loss return loss, and 35 dB isolation ...
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... Isolated Isolated TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS Parameter 1/ TABLE II FUNCTION TABLE RF-B RF-C Icontrol- A Isolated Isolated +20 mA Low- Isolated -20mA Loss Low- -20mA Loss TGS2313 Value Notes + dBm 3/ 0.45 W 3/4/ 0 320 C 0 -65 to 150 C 0 ...
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... RF Input to RF Output B RF Input to RF Output C TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE III RF CHARACTERIZATION TABLE = 25 °C, Nominal Icontrol = ± 20mA THROUGH PATH TEST IDENTIFICATION CONDITION – 18 GHz – 18 GHz – 18 GHz – 18 GHz TGS2313 NOMINAL UNITS 1 May 2008 ...
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... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Frequency (GHz) TGS2313 May 2008 ...
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... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Fixtured Data Bias Conditions: Icontrol =± Frequency (GHz Input Power (dBm) TGS2313 Input Output GHz 8 GHz 12 GHz May 2008 5 ...
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... Icontrol A RF output A Icontrol B TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Equivalent Schematic RF Input RF output B TGS2313 Icontrol C RF Output C 6 May 2008 ...
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... TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing TQS 2006 TGS2313 7 May 2008 ...
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... IControl_B, IControl_C) use on-chip resistors for diode current control. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Drawing RF A TQS 2006 TGS2313 RF C May 2008 8 ...
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... Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. • Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes TGS2313 9 May 2008 ...