TGA8399C TriQuint, TGA8399C Datasheet - Page 7

• Manufacturer Part Number: TGA8399C
• Description: Wireless Accessories 8-18GHz Driver Amp
• Manufacturer: TriQuint

Specifications of TGA8399C

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1005179

TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Email: [e-mail] Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications.
Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
Interconnect process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (for 30
sec max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
Assembly Process Notes
Advance Product Information
TGA8399C-EPU
June 25, 2003
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