TGP2104 TriQuint, TGP2104 Datasheet
TGP2104
Specifications of TGP2104
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TGP2104 Summary of contents
Page 1
... The TriQuint TGP2104 is a 180° digital phase shifter MMIC design using TriQuint’s proven 0.25 μm Three Metal 190 185 Interconnect (3MI) pHEMT process. The 180 TGP2104 will support a variety of Ka- 175 Band phased array applications including 170 military radar. 165 160 ...
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... Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE I MAXIMUM RATINGS Value dBm 0.392 W 200 °C 320 °C -65 to 150 °C May 2009 © Rev - TGP2104 Notes ...
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... Note: The RF Characteristics of typical devices are determined by fixtured measurements. State 0 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TABLE 25°C, Nominal 5V Test Conditions GHz GHz GHz GHz GHz State Table May 2009 © Rev - TGP2104 Typ Units 3 deg Phase shift Reference 180º 3 ...
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... Thermal Information Parameter Test Conditions V 1 θ Thermal Resistance (channel to backside of Pdiss = 50 uW die) Tbaseplate=70 C Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TABLE III Tch θ ( °C) (°C/ 204 TGP2104 Tm JC (hrs) > ...
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... Frequency (GHz - Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com 35 40 State 0 State May 2009 © Rev - TGP2104 190 185 180 175 170 165 160 155 150 145 140 ...
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... Measured Data 0 -5 -10 -15 -20 -25 - Frequency (GHz -10 -15 -20 -25 - Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com State 0 State State 0 State May 2009 © Rev - TGP2104 ...
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... Bond Pad #1 (RF Input) Bond Pad #1 (RF Output) Bond Pad #3 (V1) Bond Pad #4 (V2) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - 0.076 x 0.150 (0.003 x 0.006) 0.076 x 0.150 (0.003 x 0.006) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.100 (0.004 x 0.004) TGP2104 7 ...
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... Input and Output Flares are 0.010" x 0.025" on 0.010" alumina substrate GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 © Rev - TGP2104 8 ...
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... Aluminum wire should not be used. • Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Assembly Process Notes May 2009 © Rev - TGP2104 9 ...