BZB84-B33,215 NXP Semiconductors, BZB84-B33,215 Datasheet - Page 10
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BZB84-B33,215
Manufacturer Part Number
BZB84-B33,215
Description
DIODE ZENER DL 33V 300MW SOT23-3
Manufacturer
NXP Semiconductors
Datasheet
1.BZB84-C10215.pdf
(14 pages)
Specifications of BZB84-B33,215
Voltage - Zener (nom) (vz)
33V
Voltage - Forward (vf) (max) @ If
900mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 23.1V
Configuration
1 Pair Common Anode
Power - Max
300mW
Impedance (max) (zzt)
80 Ohm
Tolerance
±2%
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063353215
NXP Semiconductors
8. Test information
9. Package outline
10. Packing information
BZB84_SER_3
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
Table 12.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
Type number
BZB84-B2V4 to
BZB84-C75
Fig 7.
For further information and the availability of packing methods, see
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
Package outline SOT23 (TO-236AB)
Packing methods
[2]
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 03 — 9 June 2009
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
3
2
0.48
0.38
0.45
0.15
Section
BZB84 series
1.1
0.9
0.15
0.09
[1]
04-11-04
14.
Packing quantity
3000
-215
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
10000
-235
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